SK hynix 32 GB DDR3-1333 Registered ECC RDIMM (HMT84GR7AMR4C-H9)

SK hynix 32 GB DDR3-1333 Registered ECC RDIMM (HMT84GR7AMR4C-H9)

Exhibit Type: Enterprise DRAM Memory Architecture & Silicon Specification Dossier
•
Form Factor: 240-pin Registered DIMM (RDIMM) • Standard Height (30.0 mm PCB / 31.25 mm with Heat Spreader)
•
Standard & Density: DDR3 SDRAM • 32 GB (32,768 MB) • Quad-Rank (4Rx4)
•
Bandwidth & Timings: PC3-10600R (10.67 GB/s per channel) • CL9-9-9-24 @ 1.5V
•
Register & Telemetry: JEDEC SSTE32882 28-bit Register PLL • Integrated SPD Digital Thermal Sensor (TSE2002av)
•
Museum Inventory: 2 Physical Units (Date Codes: 1415 • 1416 • SK hynix Korea)
•
Active Deployment: Corsair Carbide Series Air 540 “Cube” Workstation (Host: cube • 192.168.111.71) • Supermicro X9SRi-F (Slots P1-DIMMA1 & P1-DIMMB1) • 160.0 GB Quad-Channel Array (Paired with 6× 16 GB Samsung RDIMMs)

1. Technical Overview & Key Specifications Table

Category Property Specification
Module Identity Manufacturer SK hynix Inc. (Icheon / Cheongju, Republic of Korea)
Product Part Number HMT84GR7AMR4C-H9
Module Capacity 32 GB (32,768 MBytes / 34,359,738,368 Bytes)
Verified Serial Numbers Unit 1: 9020B9B4 (Asset: 01141621 • Date: 1416) | Unit 2: 40276612 (Date: 1415)
JEDEC Raw Card Reference PC3-10600R-9-12-AB1 (JEDEC Raw Card AB, Revision 1)
Form Factor & Pin Count 240-pin Registered Dual In-Line Memory Module (RDIMM)
Target Market Segment Mission-Critical Enterprise Servers, High-Performance Workstations, Cloud Compute Nodes
Commercial Era / Production April 2014 (Verified Physical Date Codes: 1415 & 1416 • Weeks 15-16, 2014)
DRAM Silicon & Packaging DRAM Die Density 4 Gb (512M × 8-bit internal bank architecture / 1G × 4-bit config)
DRAM Die Generation SK hynix 30nm-class C-Die (AMR4C series stepping)
Internal Bank Architecture 8 Independent Internal Banks per DRAM Die
Total DRAM Silicon Dies 72 Silicon Dies (18 dies per rank × 4 ranks)
Physical Package Count 36 Dual-Die Packages (DDP) / 78-ball Fine-pitch Ball Grid Array (FBGA)
Package Layout on PCB 18 DDP FBGA packages on Front Side, 18 DDP FBGA packages on Back Side
Rank Organization Quad-Rank (4Rx4) • 4 physical chip-select ranks (CS0_n, CS1_n, CS2_n, CS3_n)
Device Data Width x4 bit-slice organization per DRAM component (72-bit ECC bus width)
Timings & Clock Profiles JEDEC Speed Bin DDR3-1333 (JEDEC standard PC3-10600R)
Data Transfer Rate 1,333 MT/s (Mega-transfers per second per data pin)
I/O Bus Clock Frequency 667 MHz (Double Data Rate: 2 transfers per clock cycle)
Internal Memory Core Clock 166.67 MHz (8n Prefetch Architecture)
CAS Latency (CL) 9 Clock Cycles (13.50 ns absolute access time)
Primary JEDEC Timings 9-9-9-24 (CL: 9 • tRCD: 9 • tRP: 9 • tRAS: 24)
Configured Operating Speed 800 MHz DDR3 (DDR3-1600 MT/s equivalent) in active Corsair Air 540 “Cube” workstation • 800 MT/s (PC3-6400R) in T7610 2 DPC testbench
Row Cycle Time (tRC) 49.50 ns (33 clock cycles at rated speed)
Peak Module Bandwidth 10,667 MB/s (10.67 GB/s) per single memory channel at rated 1333 MT/s
Register, Buffer & Telemetry Register PLL Silicon JEDEC SSTE32882 Compliant 28-bit 1:2 Register Buffer with Phase-Locked Loop
Address & Control Buffering Fully registered and re-clocked address, command, and control signals
Clock Distribution Differential clock input (CK, CK#) phase-locked and re-driven to all 36 DRAM packages
Intel IMC Register MTR0 0x1160 (Hardware verified 4-rank Quad-Rank topology across x4 devices)
SPD EEPROM & Sensor 256-Byte Serial Presence Detect with integrated TSE2002av digital thermal sensor
Live Operating Thermals +39.0°C (mc0 bank) / +41.0°C (mc1 bank) via onboard sensors
Live DRAM Power Draw 8.19 Watts system memory idle (Intel RAPL: 2.76W Socket 0 / 5.44W Socket 1)
Electrical & Power Supply Voltage (VDD / VDDQ) 1.5V ± 0.075V standard DDR3 operating voltage
I/O Signaling Standard SSTL_15 (Stub Series Terminated Logic 1.5V) with dynamic On-Die Termination (ODT)
Termination Voltage (VTT) 0.50 × VDD (0.75V nominal) tracking power plane
Reference Voltage (VREF) 0.50 × VDD (0.75V) for address, command, and data lines
Typical Module Power Draw ~7.5W to 9.2W under full-span active write/read bursts; ~2.1W idle
Refresh Dynamics Auto-Refresh (tRFC: 260 ns) • Average Periodic Interval (tREFI: 7.8 μs at ≤85°C, 3.9 μs at >85°C)
Physical, Mechanical & Thermal Module Dimensions 133.35 mm (L) × 30.00 mm (PCB Height) × ~7.50 mm (Thickness with Spreader)
PCB Substrate 8-layer high-frequency low-loss FR-4 with gold-plated contact fingers
Edge Contact Plating Hard Gold Plating (minimum 30 μ-inch gold over 50 μ-inch nickel)
Heat Spreader Construction Factory-installed stamped full-coverage dark anodized aluminum heat spreader
Heat Spreader Stamping SK hynix R124673H (Permanent metal stamp on lower right face)
Retention Clips Dual heavy-gauge spring steel top retention clips providing continuous thermal pad pressure
Reliability & ECC Protection Data Bus Width 72-bit (64 data bits + 8 ECC syndrome parity check bits)
Linux Kernel EDAC Mode S4ECD4ED (Single 4-bit Error Correction, Double 4-bit Error Detection / Chipkill)
Hardware Error Counters 0 Corrected Errors (CE) • 0 Uncorrected Errors (UE) (Clean signal integrity)
Error Correction Capability Single-Bit Error Correction (SEC), Double-Bit Error Detection (DED) via Hamming syndrome
Chipkill / SDDC Readiness Fully qualified for Single Device Data Correction (SDDC / Chipkill) due to x4 DRAM organization
Memory Scrubbing Engine Supports background patrol scrubbing and demand scrubbing on Intel C602 / Romley platforms

2. Memory Rank Architecture & Subsystem Topology

The fundamental engineering challenge of achieving 32 GB on a single DDR3 memory module using 4 Gb DRAM silicon was electrical bus loading. In an unbuffered DIMM (UDIMM), every DRAM chip connects its address, command, and control pins directly to the memory bus. Attempting to place 72 DRAM dies onto an unbuffered bus would create severe capacitive loading, degrading high-speed signaling to the point of complete data corruption.

The HMT84GR7AMR4C-H9 overcomes this barrier through an advanced registered architecture based on the JEDEC PC3-10600R-9-12-AB1 raw card specification:

Quad-Rank (4Rx4) Organization

The module organizes its 72 internal silicon dies into four electrical ranks of 18 dies each. Each rank presents a full 72-bit wide memory word (64 data bits + 8 ECC check bits). Because each die is organized as 1G × 4-bit, eighteen x4 devices operating in parallel form the exact 72-bit data bus required for enterprise ECC operation.

JEDEC SSTE32882 Register Buffer

At the physical center of the module sits the SSTE32882 registering clock driver (RCD). This IC acts as an electrical isolation barrier between the host memory controller and the 36 Dual-Die Packages. It receives address and command signals from the host, synchronizes them with an onboard Phase-Locked Loop (PLL), and re-drives them across the internal module traces with clean, sharp edges.

Dual-Die Packaging (DDP)

To fit 72 physical silicon dies onto a standard 133.35 mm × 30.00 mm PCB, SK hynix stacked two 4 Gb C-die silicon slices inside each 78-ball FBGA package. By utilizing 36 Dual-Die Packages (18 on each side of the PCB), the module delivers double the capacity of standard single-die modules while preserving the physical envelope required for standard server DIMM slots.

3. Monospace ASCII Silicon Architecture & Bus Schematic

The schematic below diagrams the complete electrical topology of the SK hynix HMT84GR7AMR4C-H9 module, mapping the relationship between the host memory controller, the JEDEC SSTE32882 register buffer, the four independent 18-chip DRAM ranks, and the onboard SPD/thermal sensor:

========================================================================================================================
                      SK HYNIX 32 GB DDR3-1333 REGISTERED ECC RDIMM (HMT84GR7AMR4C-H9)
                                   ELECTRICAL CIRCUIT & BUS TOPOLOGY SCHEMATIC
========================================================================================================================

                  +-------------------------------------------------------------+
                  |           HOST INTEGRATED MEMORY CONTROLLER (IMC)           |
                  |             (Intel Xeon E5-2600 v1/v2 Romley / C602)        |
                  +-------------------------------------------------------------+
                        |                          |                      |
                        | Command/Address Lines    | Differential Clock   | 72-bit Bi-directional
                        | (A0-A15, BA0-BA2, RAS#,  | (CK0, CK0#)          | Data Bus (DQ0-DQ63 +
                        |  CAS#, WE#, ODT, CKE)    |                      |  CB0-CB7 ECC Check Bits)
                        v                          v                      |
      +---------------------------------------------------------+         |
      |          JEDEC SSTE32882 28-BIT REGISTER / PLL BUFFER   |         |
      |  - Isolates Host Bus Capacitive Loading                 |         |
      |  - Parity Generation & Verification (PERR# Output)      |         |
      |  - Zero-Delay Clock Re-generation via Internal PLL      |         |
      +---------------------------------------------------------+         |
               |                     |                    |               |
               | Buffered C/A Lines  | Re-driven Clocks   | Chip Selects  |
               | (Internal Bus)      | (Y0-Y3, Y0#-Y3#)   | (S0#-S3#)     |
               +---------------------+--------------------+               |
                                     |                                    |
        +----------------------------+----------------------------+       |
        |                            |                            |       |
        v                            v                            v       v
 +--------------+             +--------------+             +-------------------+
 |    RANK 0    |             |    RANK 1    |             |   RANKS 2 & 3     |
 | 18x 4Gb Dies |             | 18x 4Gb Dies |             | 36x 4Gb Dies      |
 | (DDP Chips   |             | (DDP Chips   |             | (DDP Chips        |
 |  1 to 18)    |             |  1 to 18)    |             |  19 to 36)        |
 |              |             |              |             |                   |
 | [72-bit Bus] |             | [72-bit Bus] |             | [72-bit Bus]      |
 +--------------+             +--------------+             +-------------------+
        ^                            ^                            ^       ^
        |                            |                            |       |
        +----------------------------+----------------------------+-------+
                                     |
                          +---------------------+
                          |   72-BIT DATA BUS   |
                          | (DQ0-DQ63, CB0-CB7) |
                          +---------------------+

       +-----------------------------------------------------------------------+
       |               I2C / SMBUS SERIAL TELEMETRY SUBSYSTEM                  |
       +-----------------------------------------------------------------------+
           |                                                               |
           v                                                               v
 +-------------------------------------+         +-------------------------------------+
 |         SPD EEPROM (256-Byte)       |         |   JEDEC TSE2002av THERMAL SENSOR    |
 | - Module Part: HMT84GR7AMR4C-H9     |         | - Real-Time Operating Temperature   |
 | - JEDEC Timings: 9-9-9-24-33        |         | - Digital Output via SMBus (0x1C)   |
 | - Date Codes: 1415 / 1416           |         | - Critical Alarm Threshold Interrupt|
 +-------------------------------------+         +-------------------------------------+
========================================================================================================================

4. DRAM Cell Dynamics, Refresh Physics & Power Management

Each bit in the HMT84GR7AMR4C-H9 module is stored in a classic 1T-1C dynamic RAM storage cell consisting of a single access transistor and a microscopic storage capacitor fabricated in SK hynix’s 30nm-class lithography node. Due to quantum tunneling and dielectric leakage across the capacitor’s high-k dielectric layer, charge bleeds off continuously, requiring active electrical management:

Refresh Physics: tREFI & tRFC Dynamics

Under normal operating temperatures (≤85°C), JEDEC requires that every storage row be refreshed once every 64 milliseconds. For this 4 Gb C-die device with 8,192 refresh cycles, the average periodic refresh interval is:
tREFI = 64 ms / 8192 = 7.8 μs.

When operating between 85°C and 95°C, thermal agitation accelerates electron leakage, requiring the memory controller to double the refresh rate to extended refresh (tREFI = 3.9 μs). During each auto-refresh command, the entire rank is unavailable for reading or writing for tRFC = 260 ns. In a quad-rank module, scheduling refresh across all four ranks requires intelligent memory controller arbitration to avoid command collisions.

Thermal Engineering & Stamped Heat Spreader

With 36 Dual-Die Packages and a central register buffer packed into a standard RDIMM form factor, active heat dissipation is critical. SK hynix equipped this model with factory-stamped full-coverage anodized aluminum heat spreaders (bearing part stamp SK hynix R124673H). Held in place by dual spring-steel top clips, the spreaders draw heat away from the stacked silicon dies and distribute it into the server’s forced airflow channel, preventing localized hot-spots that could trigger premature refresh throttling.

5. Enterprise Data Integrity: SECDED, Chipkill & Telemetry

In enterprise mission-critical environments, silent data corruption is fatal. The HMT84GR7AMR4C-H9 incorporates multi-tiered hardware integrity protections:

Integrity Mechanism Implementation Mechanism Fault Protection Scope
72-bit ECC Bus (SECDED) 8 parity check bits (CB0-CB7) accompanying every 64-bit data word Corrects 100% of single-bit soft errors on the fly with zero operating system interruption; detects 100% of two-bit corruptions.
Chipkill / SDDC Readiness Enabled by x4 device organization across 18 parallel chips per rank Allows the memory controller to withstand the catastrophic failure of an entire physical DRAM chip without crashing the server or losing data.
Register Command Parity JEDEC SSTE32882 register calculates parity across address and command pins If a bus transmission error occurs on address/control lines, the register flags PERR# to the host memory controller, preventing spurious write commands to wrong memory addresses.
Hardware Patrol Scrubbing Autonomous background memory controller read-verify-rewrite cycles Scans entire 32 GB address space periodically (e.g. every 24 hours), correcting single-bit soft errors in DRAM cells before a second bit flip can occur in the same word.
Onboard Thermal Telemetry Integrated JEDEC TSE2002av digital temperature sensor on SPD bus Provides real-time module temperatures to host BMC / BIOS via SMBus, triggering closed-loop server fan speed adjustments or memory clock throttling if thresholds are breached.

6. Multi-Channel Bandwidth Scaling & Latency Profiles

When installed in enterprise server platforms like the Intel Xeon E5-2600 v1/v2 family (Socket R / LGA 2011), the integrated quad-channel memory controller interleaves access across multiple memory channels:

Configuration Mode Active Bus Width Theoretical Bandwidth Platform Application
Single-Channel (1 DIMM) 64-bit (+8-bit ECC) 10.67 GB/s (10,667 MB/s) Diagnostic / Baseline single-slot boot mode
Dual-Channel (2 DIMMs) 128-bit (+16-bit ECC) 21.33 GB/s (21,333 MB/s) Populated in 2 channels per socket (dual-channel mode)
Triple-Channel (3 DIMMs) 192-bit (+24-bit ECC) 32.00 GB/s (32,000 MB/s) LGA 1366 legacy workstation/server architectures (X8DAH)
Quad-Channel (4 DIMMs) 256-bit (+32-bit ECC) 42.67 GB/s (42,667 MB/s) Full saturation per socket on LGA 2011 (Romley platform)
Dual-Socket Quad-Channel 512-bit Aggregate 85.33 GB/s (85,333 MB/s) Dual Intel Xeon E5-2600 v1/v2 NUMA system aggregate throughput
Absolute Latency Calculation: With a CAS Latency (CL) of 9 clock cycles at a clock cycle time (tCK) of 1.50 ns (DDR3-1333), the true word access latency is:
tAA = CL × tCK = 9 × 1.50 ns = 13.50 ns.
This provides exceptionally responsive random access times, rivaling higher-frequency memory that operates with looser CAS latencies (such as DDR4-2400 CL17 at 14.17 ns).

7. Curator’s Assessment & Homelab Applicability

  1. Museum Hardware Provenance: Mateo’s Museum collection preserves 2 authentic physical units of the SK hynix 32 GB DDR3-1333 Registered ECC RDIMM (Part: HMT84GR7AMR4C-H9). Optical inspection confirms production date codes of Week 15, 2014 (Label: 1415, 2D Tag: 40276612) and Week 16, 2014 (Label: 1416, 2D Tag: 90206984), both featuring original stamped aluminum heat spreaders (SK hynix R124673H).
  2. Active Workstation Deployment in Corsair Carbide Air 540 “Cube”: Following initial testbench interrogation on the Dell Precision T7610, both SK hynix 32 GB Quad-Rank RDIMM modules have been permanently deployed in Marius’ custom workstation housed in the Corsair Carbide Series Air 540 High Airflow ATX Cube Case (Exhibit #2949) on the Supermicro X9SRi-F Server Motherboard (Exhibit #2957) (hostname cube at 192.168.111.71). The modules occupy primary memory channel slots P1-DIMMA1 (S/N: 40276612) and P1-DIMMB1 (S/N: 9020B9B4), coordinated alongside 6× 16 GB Samsung RDIMMs (Exhibit #3103) in slots DIMMA2, DIMMB2, DIMMC1/C2, and DIMMD1/D2 to form an expansive 160.0 GB Quad-Channel ECC array operating with 0 EDAC memory errors under Ubuntu 22.04.5 LTS.
  3. Historical Pinnacle of DDR3 Density: The 32 GB RDIMM was the highest density per module ever achieved in standard registered DDR3 technology prior to the adoption of LRDIMMs and the transition to DDR4. Delivering 32 GB across 72 discrete silicon dies required state-of-the-art packaging and thermal management that remains an awe-inspiring example of silicon engineering.
  4. Homelab Virtualization Sweet Spot: In modern homelab operations, memory capacity is almost always the first resource bottleneck when deploying virtual machines on Proxmox VE, TrueNAS SCALE, or Docker containers. High-density 32 GB modules allow enterprise workstations and virtualization nodes to host dense ZFS ARC caches and extensive Linux containers while consuming a fraction of the available DIMM slots.

8. Authentic Hardware Photography & Physical Silicon Inspection

High-resolution physical optical inspection of the museum’s twin SK hynix 32 GB DDR3 RDIMMs, verifying manufacturing dates, lot barcodes, and stamped thermal heat spreaders:

Exhibit 8.1: Museum Artifact Label & Stamped Heat Spreader Inspection

SK hynix 32GB 4Rx4 PC3-10600R DDR3 Registered ECC RDIMM Modules HMT84GR7AMR4C-H9

Museum Hardware Artifact: Authentic photographic macro inspection of the museum’s two physical SK hynix 32 GB DDR3 RDIMM modules. The factory nameplate labels display the full JEDEC string 32GB 4Rx4 PC3-10600R-9-12-AB1, country of origin (KOREA), and consecutive manufacturing date codes (1415 and 1416). Visible on the lower right face of both modules is the factory metal stamping: SK hynix R124673H.

Label Markings Decoded

  • SK hynix: Manufacturer corporate brandmark.
  • 32GB 4Rx4: 32 Gigabytes density organized into four x4-bit electrical ranks.
  • PC3-10600R: Standard DDR3-1333 Registered ECC DIMM specification.
  • -9-12-AB1: CAS Latency 9, JEDEC delay bin 12, JEDEC Raw Card AB revision 1.
  • KOREA: Country of origin (SK hynix Korea wafer fabrication and assembly).
  • HMT84GR7AMR4C-H9: Factory part number (4Gb C-Die, DDR3-1333 speed bin).
  • D3 AD: DRAM component stepping and internal assembly test identifier.
  • 1415 / 1416: Manufacturing date codes: Week 15, 2014 & Week 16, 2014.
  • ECO / CE: European Conformity and Lead-Free / RoHS environmental compliance.

Mechanical & Thermal Engineering Details

  • SK hynix R124673H: Stamped heat spreader part designation on lower-right anodized surface.
  • Spring Steel Clips: Dual top retention brackets applying uniform mechanical pressure across thermal interface pads.
  • 240-Pin Gold Fingers: Undamaged 30 micro-inch hard gold plating providing corrosion-resistant electrical coupling.
  • Center Notch Alignment: Standard DDR3 keying notch located at 70.87 mm from pin 1, preventing accidental insertion into DDR2 or DDR4 sockets.
  • Thermal Isolation: Protects dual-die stacked DRAM silicon and central register buffer from thermal throttling in dense 2U/4U workstation enclosures.

9. Live Hardware Telemetry, Intel IMC Registers & Testbench Diagnostics

To index hardware parameters inaccessible from visual package inspection, the twin modules were temporarily mounted for a one-time testbench session onto the Dell Precision T7610 dual Intel Xeon E5-2637 v2 workstation (which permanently operates 16 × 16 GB Samsung RDIMMs). Live hardware registers, SMBIOS tables, kernel EDAC controllers, and thermal sensors were directly interrogated before returning the modules to museum storage:

9.1 SMBIOS 2.7 / DMI Type 17 Hardware Ingestion & Serial Verification

The SMBIOS Type 17 table records low-level firmware telemetry read directly from the module’s onboard Serial Presence Detect (SPD) EEPROM during BIOS power-on self-test (POST):

DMI Type 17 Property Physical Unit 1 (Date Code 1416) Physical Unit 2 (Date Code 1415)
Motherboard Slot Locator DIMM2_CPU1 (Handle 0x0043) DIMM1_CPU2 (Handle 0x004D)
Manufacturer Identifier Hynix Semiconductor Hynix Semiconductor
Hardware Part Number HMT84GR7AMR4C-H9 HMT84GR7AMR4C-H9
Hardware Serial Number 9020B9B4 (SPD Raw Hex) 40276612 (Optical DataMatrix tag)
Firmware Asset Tag 01141621 (Encodes: Year 2014, Week 16) 011415xx (Encodes: Year 2014, Week 15)
Capacity & Form Factor 32 GB • 240-pin Registered DIMM 32 GB • 240-pin Registered DIMM
Bus Widths (Data / Total) 64 bits Data / 72 bits Total (+8-bit ECC) 64 bits Data / 72 bits Total (+8-bit ECC)
Rated vs. Configured Speed Rated: 1333 MT/s • Configured: 800 MT/s Rated: 1333 MT/s • Configured: 800 MT/s

9.2 Intel Ivy Bridge-EP IMC PCI Configuration Register Interrogation

Direct PCI configuration space interrogation of the Intel Xeon E5-2637 v2 Integrated Memory Controllers (Device 15, Function 2 to 5 across PCI Bus 7f and ff) exposes the silicon-level register state:

IMC Register PCI Address & Offset Raw Hex Value Silicon Architectural Decode
MTR0 (Memory Technology) 7f:0f.4 (CPU1 Chan 2), 0x80 0x11600000 Quad-Rank (4R), x4 DRAM device width, 4 Gb die density, DIMM populated.
MTR0 (Memory Technology) ff:0f.2 (CPU2 Chan 0), 0x80 0x11600f00 Quad-Rank (4R), x4 DRAM device width, 4 Gb die density, DIMM populated.
Target Address Decoders 7f:0f.4, 0x108 - 0x110 7e 00 00 a0 be 00 00 90 Active channel address window mapping 32 GB physical address range on Node 0.
Home Agent 0 7f:0e.0 • ff:0e.0 [8086:0e60] (rev 04) Dual NUMA routing agents bound to Linux kernel sb_edac driver.

9.3 Linux Kernel EDAC Diagnostics & S4ECD4ED Chipkill Protection

The Linux kernel Error Detection and Correction subsystem (sb_edac driver) actively monitors the Ivy Bridge-EP memory controllers, reading real-time ECC syndromes:

Controller 0 (Socket 0 / CPU 1)

  • Device Node: /sys/devices/system/edac/mc/mc0/
  • Assigned Slot: dimm6 (Channel 2, Slot 0)
  • Reported Size: 32,768 MB (32 GB)
  • Device Type: x4 bit-slice devices
  • EDAC Mode: S4ECD4ED (Chipkill protection)
  • Error Counts: 0 CE / 0 UE (Zero errors recorded)

Controller 1 (Socket 1 / CPU 2)

  • Device Node: /sys/devices/system/edac/mc/mc1/
  • Assigned Slot: dimm0 (Channel 0, Slot 0)
  • Reported Size: 32,768 MB (32 GB)
  • Device Type: x4 bit-slice devices
  • EDAC Mode: S4ECD4ED (Chipkill protection)
  • Error Counts: 0 CE / 0 UE (Zero errors recorded)

9.4 Multi-Rank Bus Loading & 2 DPC Frequency Derating Analysis

A notable finding from live telemetry is that the entire memory subsystem was configured by firmware to operate at 800 MT/s (PC3-6400R) rather than the modules’ rated 1333 MT/s speed. This behavior directly exemplifies the physical electrical constraints of DDR3 multi-rank enterprise memory architectures:

  • Capacitive Bus Loading in 2 DPC: When a Quad-Rank (4Rx4) module is populated in the same channel alongside a Dual-Rank (2Rx4) module, the channel is subjected to 6 physical electrical ranks. Each additional rank increases the trace capacitance on the Stub Series Terminated Logic (SSTL_15) data lines.
  • JEDEC & Intel Speed Derating: To guarantee setup and hold margins (tIS/tIH and tDS/tDH) and maintain clean open eye diagrams across all 72 data and ECC lines, the Intel Xeon E5-2600 v2 memory controller automatically derates the memory clock frequency to 400 MHz (800 MT/s).
  • ACPI SRAT Memory Sizing: In this asymmetric testbench configuration, the Dell BIOS (A17) mapped 208 GiB into the active operating system memory space (112 GB on Node 0 and 96 GB on Node 1), ensuring symmetrical channel striping while preserving rock-solid stability with zero bus parity faults.

9.5 Thermal Telemetry, Intel RAPL Power Profiling & Throughput Benchmark

Thermal & Power Telemetry

  • Socket 0 Memory Bank: +39.0°C (Onboard TSE2002 sensor)
  • Socket 1 Memory Bank: +41.0°C (Onboard TSE2002 sensor)
  • Socket 0 DRAM Power (RAPL): 2.76 Watts idle
  • Socket 1 DRAM Power (RAPL): 5.44 Watts idle
  • Total DRAM Power Draw: 8.19 Watts combined
  • Chassis Forced Airflow: Dual CPU fans at ~990 RPM, secondary fans at ~596 RPM.

Multi-Threaded Read Throughput

  • Benchmark Engine: sysbench memory (8 threads, 1MB block size)
  • Total Data Transferred: 20,480 MiB (20 GiB workload)
  • Sustained Read Bandwidth: 115,971.61 MiB/s (115.9 GB/s)
  • Average Latency: 0.06 ms (Min: 0.04 ms, Max: 0.26 ms)
  • 95th Percentile Latency: 0.07 ms
  • Signal Integrity: 100% successful transfers with 0 corrected or uncorrected hardware errors.

10. Empirical Hardware Telemetry & Corsair Air 540 “Cube” Deployment (Host: cube • 192.168.111.71)

Active Workstation Architecture: Corsair Carbide Series Air 540

The museum’s twin SK hynix 32 GB Quad-Rank RDIMMs (S/N: 40276612 and 9020B9B4) are actively deployed in Marius’ primary operational workstation housed in the Corsair Carbide Series Air 540 High Airflow ATX Cube Case (Exhibit #2949). Built upon the Supermicro X9SRi-F Server Motherboard (Exhibit #2957) (PCB Rev 1.20, Serial: ZM14BS021242, AMI BIOS 3.3, IPMI BMC 3.64), the workstation coordinates an Intel Xeon E5-2680 8-core processor, an MSI GeForce RTX 3050 LP GPU, and a Kingston HyperX 3K SSD with a 160.0 GB aggregate Quad-Channel memory pool.

Full 8-Slot Memory Population & Topology Matrix

Slot Motherboard Locator Module Part Number Manufacturer Serial Number Capacity Rank & Speed
1 P1-DIMMA1 HMT84GR7AMR4C-H9 SK Hynix 40276612 32 GB Quad-Rank (4Rx4) • 800 MHz
2 P1-DIMMA2 M393B2G70BH0-CK0 Samsung 85CE56A4 16 GB Dual-Rank (2Rx4) • 800 MHz
3 P1-DIMMB1 HMT84GR7AMR4C-H9 SK Hynix 9020B9B4 32 GB Quad-Rank (4Rx4) • 800 MHz
4 P1-DIMMB2 M393B2G70BH0-CK0 Samsung 85CE5756 16 GB Dual-Rank (2Rx4) • 800 MHz
5 P1-DIMMC1 M393B2G70BH0-CK0 Samsung 85CE5767 16 GB Dual-Rank (2Rx4) • 800 MHz
6 P1-DIMMC2 M393B2G70DB0-YK0 Samsung 4150AF8A 16 GB Dual-Rank (2Rx4) • 800 MHz
7 P1-DIMMD1 M393B2G70DB0-YK0 Samsung 4150AFDE 16 GB Dual-Rank (2Rx4) • 800 MHz
8 P1-DIMMD2 M393B2G70BH0-YK0 Samsung 85CDF070 16 GB Dual-Rank (2Rx4) • 800 MHz

Electrical & Environmental Telemetry

  • Total Capacity: 160.0 GB (157 GiB usable in OS)
  • VDIMM Rail Voltage: 1.51 V (IPMI hardware sensor)
  • Operating Bus Clock: 800 MHz (DDR3-1600 MT/s equivalent)
  • Error Detection (EDAC): 0 Corrected • 0 Uncorrected
  • Chassis Thermals: CPU idle +32.0°C / load +34.0°C, PCH +45.0°C, SSD +24.0°C

PassMark Performance Progression

Authoritative Technical Sources & Citations:

  • JEDEC Solid State Technology Association, DDR3 SDRAM Standard, JESD79-3F (Specification for 1.5V and 1.35V DDR3 SDRAM devices).
  • JEDEC Standard No. 82-29A, Definition of the SSTE32882 Registering Clock Driver with Parity Test for DDR3 RDIMM Applications.
  • SK hynix Semiconductor Inc., DDR3 SDRAM Registered DIMM Product Datasheet, Rev 1.2 (P/N HMT84GR7AMR4C-H9).
  • Intel Corporation, Intel Xeon Processor E5-2600 Series Datasheet – Volume 2: Registers & Memory Controller Architecture.
  • Dell Inc., Dell Precision T7610 Workstation Technical Guide & Memory Population Guidelines.

Mateo’s Museum Hardware Archive • Curator & Hardware Engineering Research: Marius Cogeanu • Published September 2026.